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GaAs Wafer Application of semiconductor

Addtime:2022.08.29 Click:1013

Gallium arsenide is an inorganic compound with the chemical formula of GaAs. It is a black gray solid with a melting point of 1238℃. It can exist stably in the air below 600℃and is not eroded by non oxidizing acid.

Gallium arsenide is an important semiconductor material. It belongs to group III-V compound semiconductor. It belongs to sphalerite type lattice structure with lattice constant of 5.65 × 10-10m, band gap width 1.4 ev.

GaAs-Wafer-N
Product Type	Semi-conducting
Growth Method	VGF
Dopant	Si
DiameterΦ	50.8±0.1
Crystal orientation	(100)15°±0.5°off toward (111)A
Orientation of main locating edge	EJ[0,-1-1] ±0.5°
Orientation of auxiliary locating edge	EJ[0,-1-1] ±0.5°
Length of main locating edge	12±1
Lengthof auxiliary locating edge	7±1
Carrier concentration	（4-40）×1017
resistivity	0.8~9×10-3
mobility	＞1000
dislocation density	≤5000
TTV	350±10
TIR	≤10
BOW	≤10
Warp	≤10
Polish	Single Polish
Packing	25 pieces/packing